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III-V compound semiconductors
Lu and associate Prof. First, they enhanced the silicon emission intensity greatly by developing a film growth technique for high-density silicon nanocrystals Physica E, 89, Then they developed a high-pressure low-temperature passivation approach, which contributed to a full saturation of dangling bonds, leading to increased optical gains that were comparable to those achieved by gallium arsenide GaAs and indium phosphide InP. On this basis, they designed and fabricated distributed feedback […]. Wafer bow is caused by stress arising mainly from mismatches of coefficients of thermal expansion between InGaP, or other III-V compound semiconductors, and Si.
Bowing adversely affects wafer-scale processing, particularly for large-diameter substrates. Phone: Email: sales svmi. III-V compound semiconductors. From phys.
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