Handbook of Semiconductor Technology: Electronic structures and properties of semiconductors. Covering the structure and properties of semiconductors, this volume places particular emphasis on concepts relevant to semiconductor technology.
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This is a dummy description. Covering the structure and properties of semiconductors, this volume places particular emphasis on concepts relevant to semiconductor technology. Of interest to physicists and engineers in research and in the electronics industry, this is a valuable reference source and state-of-the-art review by the world's top authors. The average tensor components of electrical conductivity, Seebeck coefficient, thermal conductivity and power factor were calculated discussed in details within temperature range between K and K.
Electronic Structure of Semiconductors
The power factor of Ba4LaGe3SbSe13 exposed that it is potential candidate for thermoelectric technological applications around K. The second order dielectric tensor components xx, yy and zz of transport properties conductivity, Seebeck coefficient, thermal conductivity and power factor show considerable anisotropy.
Authors are requested to submit articles directly to Online Manuscript Submission System of respective journal. Related article at Pubmed , Scholar Google. Thermoelectricity is the phenomenon of conversion between thermal and electrical energy. Compared with other technologies, thermoelectric TE devices offer distinct advantages: they have no moving parts, contain no chlorofluorocarbons, and have a long lifetime of reliable operation.
III-V Ternary and Quaternary Compounds
However, current TE materials have found limited commercial application due to their low efficiency. Presently, simple bulk materials have reached an upper limit of ZT at approximately 1. Thermoelectric devices, allowing the solid-state conversion between thermal and electrical energy, have long been considered a very attractive technology for cooling and waste heat recovery.
However, the low conversion efficiencies of actual thermoelectric devices have prevented them from entering most of their potential application markets. Over the last 15 years, advances in the fields of materials science and nanotechnology have restored an intense interest for such an energy conversion technology.
Among the most studied materials in thermoelectric research are ternary and higher antimony chalcogenides [3—12], bismuth chalcogenides [13—17], germanium and tin-based clathrates [18—21]. Based on this, we are currently investigating higher germanium antimony chalcogenides. While there are no analogous selenides known that comprise both Ge and Sb, a handful of selenogermanates as well as seleno-antimonates have been reported before.
The former are often noncentrosymmetric and typically exhibit GeIVSe4 tetrahedra e. Arguably the compound most comparable to the title compound Ba4LaGe3SbSe13 is the noncentrosymmetric quaternary silicon antimony selenide Ba4SiSb2Se11  that show only little structural resemblance, if any. Assoud et al.
Its structure composed of GeSe4 monotetrahedra and Ge2Se7 ditetrahedra. The inert pair of the SbIII atom is sterically active, as reflected in a severely irregular Se coordination reminiscent of the situation in Sb2Se3.
It is well-known that LDA scheme  usually underestimated the calculated energy gap within DFT in comparison to the experimental data. The LDA is the simplest format not adequately flexible to reproduce both the exchange—correlation energy and its charge derivative accurately which generally cause to underestimate the energy band gap . To overcome this drawback Engel and Vosko  constructed a new functional form the generalized gradient approximation GGA which is able to better reproduce the exchange potential at the expense of less agreement in the exchange energy.
Therefore we think it would be beneficial to use Engel-Vosko generalized gradient approximation EVGGA  which optimizes the corresponding potential for band-structure calculations for such calculation. The above discussion clarify that most of the previous work is focused on the structural properties of the investigated compound.
In present work we concentrate on density of states, electronic charge density and thermoelectric properties, using full potential linear augmented plane wave FLAPW , which is one of the most accurate method [34, 35]. The selected RMT is 1.
Handbook Of Semiconductor Technology Electronic Structure And Properties Of Semiconductors Volume 1
The self-consistent calculations are believed to be converged when the difference in total energy of the crystal did not exceed Ryd for successive steps. The self consistent calculations were obtained by 84 k points in irreducible Brillouin zone IBZ. From the calculated partial density of states as shown in Fig. From Both Ge-s 0.
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